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| MJD243 (NPN), MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications Designed for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W POWER TRANSISTOR 4 4 Base 1 Collector 2 Emitter 3 DPAK-3 CASE 369D STYLE 1 12 3 DPAK-3 CASE 369C STYLE 1 * Collector-Emitter Sustaining Voltage - * VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc High Current-Gain - Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94, V-0 @ 0.125 in. ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Package is Available * * * * MARKING DIAGRAMS YWW J2x3 YWW J2x3 * * * * * Y WW J2x3 x = Year = Work Week = Device Code = 4 or 5 ORDERING INFORMATION Device MJD243 MJD243T4 MJD243T4G MJD253-1 MJD253T4 Package DPAK-3 DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 Shipping 75 Units/Rail 2500/Tape & Reel 2500/Tape & Reel 75 Units/Rail 2500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 March, 2004 - Rev. 8 Publication Order Number: MJD243/D MJD243 (NPN), MJD253 (PNP) MAXIMUM RATINGS Rating Collector-Base Voltage Symbol VCB Value 100 100 7.0 4.0 8.0 1.0 Unit Vdc Vdc Vdc Adc Adc PD, POWER DISSIPATION (WATTS) II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II Collector-Emitter Voltage Emitter-Base Voltage VCEO VEB IC IB Collector Current-Continuous -Peak Base Current Total Device Dissipation @ TC = 25C Derate above 25C Total Device Dissipation @ TA = 25C (Note 1) Derate above 25C Operating and Storage Junction Temperature Range PD PD 12.5 0.1 1.4 W W/C W 0.011 W/C C TJ, Tstg -65 to + 150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted on minimum pad sizes recommended. TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 TC 0.5 0 5 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 MJD243 (NPN), MJD253 (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient (Note 2) Symbol RqJC RqJA Value 10 89.3 Unit C/W IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) VCEO(sus) ICBO IEBO hFE 100 - - - - Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0, TJ = 125C) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) 100 100 100 180 - nAdc mAdc nAdc - DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc) DC Current Gain (Note 3) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) 40 15 VCE(sat) Vdc - - - - 0.3 0.6 1.8 1.5 Base-Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc) Base-Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT 40 - - MHz pF Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob 50 2. 3. 4. When surface mounted on minimum pad sizes recommended. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. fT = hFE* ftest. http://onsemi.com 3 MJD243 (NPN), MJD253 (PNP) 10 IC, COLLECTOR CURRENT (AMPS) 5 2 1 0.5 0.2 0.1 5 ms dc 1 ms 500 ms 100 ms 0.05 0.02 0.01 1 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2. Active Region Maximum Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 0 (SINGLE PULSE) RqJC(t) = r(t) qJC RqJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 3. Thermal Response http://onsemi.com 4 MJD243 (NPN), MJD253 (PNP) NPN MJD243 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.04 0.06 TJ = 150C 25C -55 C VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 TJ = 150C 25C -55 C PNP MJD253 VCE = 1.0 V VCE = 2.0 V 0.1 0.4 0.6 0.2 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 4. DC Current Gain 1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 5.0 1.4 TJ = 25C 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE @ VCE = 1.0 V IC/IB = 10 5.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/ C) V, TEMPERATURE COEFFICIENTS (mV/ C) +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.04 0.06 0.1 0.2 0.4 qVB FOR VBE *qVC FOR VCE(sat) -55 C to 25C 25C to 150C -55 C to 25C 0.6 1.0 2.0 4.0 25C to 150C *APPLIES FOR IC/IB hFE/3 -1.0 -1.5 -2.0 qVB FOR VBE 0.1 25C to 150C -55 C to 25C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 -2.5 0.04 0.06 IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients http://onsemi.com 5 MJD243 (NPN), MJD253 (PNP) VCC +30 V RC RB D1 -4 V SCOPE t, TIME (ns) 1K 500 300 200 100 50 30 20 10 5 3 2 1 0.01 NPN MJD243 PNP MJD253 td VCC = 30 V IC/IB = 10 TJ = 25C tr 25 ms +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 3 5 10 Figure 7. Switching Time Test Circuit Figure 8. Turn-On Time 10K 5K 3K 2K 1K t, TIME (ns) 500 300 200 100 50 30 20 10 0.01 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 TJ = 25C 100 C, CAPACITANCE (pF) 70 50 30 20 tf NPN MJD243 PNP MJD253 3 5 10 10 1.0 2.0 MJD243 (NPN) MJD253 (PNP) 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Cob Cib 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 9. Turn-Off Time Figure 10. Capacitance 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 30 20 Cob Cib 10 1 2 3 5 7 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 11. Capacitance http://onsemi.com 6 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches DPAK-3 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK-3 (SINGLE GAUGE) CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJD243/D |
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